CRUCIBLE FOR GROWING COMPOUND SEMICONDUCTOR

摘要

PURPOSE:To extend the life of a thermally decomposed boron nitride crucible and to stabilize said crucible by controlling the properties of the crucible to a specific range. CONSTITUTION:The titled crucible consists of the layered structure of the ther mally decomposed boron nitride obtd. by a chemical deposition method. (A) the Vickers hardness Hv measured by exerting 200g load to the crucible for 15 seconds at =100mu/s approaching speed of a Vickers indenter is =Hv(0.2/15)62.0 and (B) the length of the longest crack among the cracks generated on the test surface when 1,000g load is kept exerted perpendicularly to the test surface by using the Vickers indenter for 30 seconds is =300mu. The crucible substantially withstands the force thereto from the outside in the stage of removing B2O3 as a sealing agent from the crucible when the crucible is used by an LEC method. Since the amt. of the BN to be stripped by sticking to the B2O3 is extremely small, the crucible has the long and stable life.