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method and apparatus for forming solar cells to home systems to thin film by compounds mold piritici i-iii - vi2 and solar cells so produced

机译:模塑料piritici i-iii-vi2形成太阳能电池到家庭系统的薄膜的方法和装置

摘要

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns ( SIMILAR 2.5 mu m to SIMILAR 5.0 mu m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.
机译:一种改进的薄膜大面积太阳能电池及其形成方法,具有较高的光电能量转换效率,其特征在于,该电池包括由以下材料形成的pn型异质结:(i)第一半导体包含选自I-III-VI2黄铜矿三元材料类别的光伏活性材料的层,该层被真空沉积在范围从大约2.5微米到大约5.0微米(近似2.5微米)的薄的“组成渐变”层中至大约5.0μm),并且其中光伏活性材料的下部区域优选地包括p型半导体材料的低电阻率区域,该p型半导体材料的低电阻率区域具有相对高电阻率的叠加区域,瞬态n型半导体材料限定了瞬态pn同质结; (ii)第二半导体层,其包括低电阻率的n型半导体材料;其中,(a)在第一半导体层的两个离散并置区域的元素构成之间的相互扩散,该两个相邻并置区域限定了瞬态pn同质结层,以及(b)在第一半导体层中的瞬态n型材料与第二n型半导体之间层,使第一半导体层中的瞬态n型材料演变成p型材料,从而定义了一个薄层异质结器件,其特征在于不存在会降低系统能量转换效率的空隙,空位和结节。

著录项

  • 公开/公告号IT1172197B

    专利类型

  • 公开/公告日1987-06-18

    原文格式PDF

  • 申请/专利权人 THE BOEING CO;

    申请/专利号IT19810050022

  • 发明设计人 MICKELSEN REID A.;WEN SHUH CHEN;

    申请日1981-12-29

  • 分类号F24J;

  • 国家 IT

  • 入库时间 2022-08-22 07:18:24

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