首页> 外国专利> ELECTRONIC CIRCUIT ELEMENT WITH FIELD-EFFECT TRANSISTOR OPERATION, APPLICATIONS OF THIS CIRCUIT ELEMENT, AND SUBSTITUTION CIRCUIT FOR SUCH AN ELEMENT

ELECTRONIC CIRCUIT ELEMENT WITH FIELD-EFFECT TRANSISTOR OPERATION, APPLICATIONS OF THIS CIRCUIT ELEMENT, AND SUBSTITUTION CIRCUIT FOR SUCH AN ELEMENT

机译:具有场效应晶体管操作的电子电路元件,该电路元件的应用以及用于此类元件的替代电路

摘要

An electronic circuit element with field-effect operation and with such characteristics that its source terminal (2) is to be connected, in the case of an N-type element (1a) to the positive, and in the case of a P-type element (1b) to the negative pole of a current source, said element (1) being non-conducting if its gate terminal is at the voltage of the pole connected with the drain terminal (3). This element (1) can be used as a memory circuit, for forming a trivalent switching circuit, and as an analogue amplifier with a negative resistance characteristic. Such an element (1) can be assembled from a series connection of an n-type and a p-type field-effect transistor (11a, 11b) having their source electrodes (12) interconnected, the gate terminal (4) being formed by the gate electrode (14) of the n-type or p-type transistor (11a, 11b) resp., the gate electrode (14) of the other transistor being connected with the drain electrode (13) of the first one.
机译:具有场效应操作并且具有这样的特性的电子电路元件:在N型元件(1a)上连接正极,在P型情况下,其源极端子(2)要连接元件(1b)到电流源的负极,如果所述元件(1)的栅极端子处于与漏极端子(3)连接的电极的电压,则所述元件(1)不导通。该元件(1)可以用作存储电路,用于形成三价开关电路,以及用作具有负电阻特性的模拟放大器。这样的元件(1)可以由其源电极(12)互连的n型和p型场效应晶体管(11a,11b)的串联连接来组装,栅极端子(4)由n型或p型晶体管(11a,11b)的栅电极(14)分别与另一个晶体管的栅电极(14)与第一个晶体管的漏电极(13)连接。

著录项

  • 公开/公告号WO8700367A1

    专利类型

  • 公开/公告日1987-01-15

    原文格式PDF

  • 申请/专利权人 SPEK JOHAN DIRK;

    申请/专利号WO1986NL00017

  • 发明设计人 SPEK JOHAN DIRK;

    申请日1986-06-24

  • 分类号H03K3/353;G11C11/40;G11C11/56;

  • 国家 WO

  • 入库时间 2022-08-22 07:16:13

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