首页> 外国专利> ELECTRONIC CIRCUIT ELEMENT WITH FIELD-EFFECT TRANSISTOR OPERATION, APPLICATIONS OF THIS CIRCUIT ELEMENT, AND SUBSTITUTION CIRCUIT FOR SUCH AN ELEMENT

ELECTRONIC CIRCUIT ELEMENT WITH FIELD-EFFECT TRANSISTOR OPERATION, APPLICATIONS OF THIS CIRCUIT ELEMENT, AND SUBSTITUTION CIRCUIT FOR SUCH AN ELEMENT

机译:具有场效应晶体管操作的电子电路元件,该电路元件的应用以及用于此类元件的替代电路

摘要

electronic circuit element operating with field-effect and having characteristics such that its source terminal (2) is to be connected, in the case of an element of type N (1a) to the positive pole, and in the case of a P type element (1b) the negative pole of a current source, said element (1) being non-conductive when its gate terminal is at the voltage of the pole connected with the drain terminal (3). This element (1) can be used as a memory circuit, to form a trivalent switching circuit, and as an analog amplifier with a negative distance characteristic. Such an element (1) can be assembled from a series connection of a type field effect transistor and a p-type field effect transistor (11a, 11b) whose source electrodes (12) are interconnected, the gate terminal (4) being formed by the gate electrode (14) of the n-type transistor or p-type transistor (11a, 11b) respectively, the gate electrode (14) of the other transistor being connected to the drain electrode (13) of the first.
机译:在N型元件(1a)的情况下和P型元件的情况下,具有场效应并具有其源极端子(2)要连接的特性的电子电路元件(1b)电流源的负极,当所述元件(1)的栅极端子处于与漏极端子(3)连接的电极的电压时,所述元件(1)不导电。该元件(1)可以用作存储电路,以形成三价开关电路,并且可以用作具有负距离特性的模拟放大器。这种元件(1)可以由源电极(12)互连的类型场效应晶体管和p型场效应晶体管(11a,11b)的串联连接来组装,栅极端子(4)由n型晶体管或p型晶体管(11a,11b)的栅电极(14)分别与另一个的栅电极(14)连接到第一个的漏电极(13)。

著录项

  • 公开/公告号EP0225924A1

    专利类型

  • 公开/公告日1987-06-24

    原文格式PDF

  • 申请/专利权人 SPEK JOHAN DIRK;

    申请/专利号EP19860904412

  • 发明设计人 SPEK JOHAN DIRK;

    申请日1986-06-24

  • 分类号H03K3/353;G11C11/40;G11C11/56;

  • 国家 EP

  • 入库时间 2022-08-22 07:14:59

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号