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Electronic circuit element with field-effect transistor operation applications of this circuit element, and substitution circuit for such an element

机译:具有该电路元件的场效应晶体管的工作应用的电子电路元件以及该元件的替代电路

摘要

An electronic circuit element with field-effect operation and with such characteristics that its source terminal (2) is to be connected, in the case of an N-type element (1a) to the positive, and in the case of a P-type element (1b) to the negative pole of a current source, said element (1) being non-conducting if its gate terminal is at the voltage of the pole connected with the drain terminal (3). This element (1) can be used as a memory circuit, for forming a trivalent switching circuit, and as an analogue amplifier with a negative resistance characteristic. Such an element (1) can be assembled from a series connection of an n- type and a p-type field-effect transistor (11a, 11b) having their source electrodes (12) interconnected, the gate terminal (4) being formed by the gate electrode (14) of the n-type or p-type transistor (11a, 11b) resp., the gate electrode (14) of the other transistor being connected with the drain electrode (13) of the first one.
机译:具有场效应操作并且具有这样的特性的电子电路元件:在N型元件(1a)上连接正极,在P型情况下,其源极端子(2)要连接元件(1b)到电流源的负极,如果所述元件(1)的栅极端子处于与漏极端子(3)连接的电极的电压,则所述元件(1)不导通。该元件(1)可以用作存储电路,用于形成三价开关电路,以及用作具有负电阻特性的模拟放大器。这样的元件(1)可以由其源极(12)互连的n型和p型场效应晶体管(11a,11b)的串联连接来组装,栅极端子(4)由n型或p型晶体管(11a,11b)的栅电极(14)分别与另一个晶体管的栅电极(14)与第一个晶体管的漏电极(13)连接。

著录项

  • 公开/公告号US4823025A

    专利类型

  • 公开/公告日1989-04-18

    原文格式PDF

  • 申请/专利权人 SPEK;JOHAN D.;

    申请/专利号US19870030848

  • 发明设计人 JOHAN D. SPEK;

    申请日1987-04-06

  • 分类号H03K3/353;H03K17/687;H03K19/094;G11C11/34;

  • 国家 US

  • 入库时间 2022-08-22 06:28:16

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