Method for forming a slit hole in a metal layer in a bipolar double metal process

摘要

IC element having good heat stress resistance property was prepd. by the following steps: (1) forming the first metal layer by depositing the fist metal on the oxide layer of silicone substrate and photomasking; (2) forming insulation layer between the first metal layer and the second metal layer by depositing the first PIQ/PECVD and forming a through hole; (3) forming the second metal layer by depositing the second metal to bring the first metal layer partially in contact with the second metal layer and photomasking; (4) stabilizing surface by depositing the second PIQ/PECVD. A slit hole is formed in the second metal layer in the process of forming the second metal layer.