Dual inverse zener diode with buried junctions

摘要

A zener diode structure for integrated circuits is disclosed. The device includes a pair of opposing zener diodes separated by a parasitic resistance. The zener breakdown junctions of the two diodes are well below the surface of the device thereby reducing any adverse effect of stray surface charges and ultraviolet radiation. Further, the doping levels of the opposing diodes are selected to reduce drift in the breakdown voltage due to variations in operating temperature of the device.