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Lateral confinement of charge carriers in a multiple quantum well structure
Lateral confinement of charge carriers in a multiple quantum well structure
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机译:横向限制在多量子阱结构中的载流子
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摘要
Non-invasive structures for laterally confining charge carriers in the narrow bandgap layers of a multiple quantum wall semiconductor device are disclosed. Such structures can be expected to be useful in charge coupled devices.
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