SUPERWIDE-BAND HIGH OUTPUT TRANSISTOR AMPLIFIER

摘要

PURPOSE:To realize a superwide-band and high-output transistor amplifier, by forming a superhigh frequency FET on the first earth conductor block and forming two main transmission lines, matching impedance correcting circuits, and impedance converting circuits on the second earth conductor. CONSTITUTION:A superhigh frequency FET1 with a low-pass type input and output impedance matching circuit for superhigh frequency and wide band where the lower limit of the amplification band is 0.5-2GHz is formed on the first earth conductor block 18. Two main transmission lines 8 and 23 to be connected to input and output terminals of the FET1, matching impedance correcting circuits 9 and 24 which are provided on lines 8 and 23 and function in 0.5-2GHz band, and low- pass type impedance converting circuits 12 and 28 which convert resistances 13 and 29 to high impedances and have band lower limit 0.5-2GHz are formed on the second earth conductor block 17. The block 17 is put on the block 18.