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NEEDLE PRESSURE ADJUSTING METHOD IN WAFER PROBER

机译:晶圆探针中的针压调整方法

摘要

PURPOSE:To contrive high accuracy by repeating the feedback of a result of judgment to a wafer prober by judging a contact check with a semiconductor tester. CONSTITUTION:A wafer 4 to be tested is set on a wafer prober 2 and a probe card 3 is provided with a needle 3a open on the wafer prober 2. Then, the probe card 3 on the wafer prober 2 is lowered, the needle 3a is slowly lowered; each time, a contact check is judged by a semiconductor tester 1. If the needle 3a is in the open state, a similar operation is repeated again, the needle 3a is brought into contact with the wafer 4 to be tested, all the needles 3a are made a short-circuit state and the test is repeated until a short-circuit is judged. Then, after short-circuit is judged as present, the needle pressure adjustment of the wafer prober 2 is finished by setting the needle 3a at the position further lowered by only an appropriate overdrive value Xmum from the position of the needle 3a on the wafer prober 2. This makes the automatic needle pressure adjustment between the needle tip of the probe card and the wafer to be tested, and an appropriate contact state can be obtained.
机译:目的:通过重复与半导体测试仪的接触检查来判断结果对晶片探测器的反馈,以实现高精度。构成:将要测试的晶片4放置在晶片探测器2上,并且探针卡3的针3a开口在晶片探测器2上。然后,放下晶片探测器2上的探针卡3,将针3a放下慢慢降低;每次,由半导体测试仪1判断接触检查。如果针3a处于打开状态,则再次重复类似的操作,使针3a与要测试的晶片4接触,所有针3a处于短路状态并重复测试,直到判断出短路为止。然后,在判断为存在短路之后,通过将针头3a设置在比晶片检测器上的针头3a的位置仅进一步降低适当的超速值Xmum的位置,来完成晶片探测器2的针压调整。 2.这样可以自动调节探针卡的针尖和被测晶片之间的针压,并获得适当的接触状态。

著录项

  • 公开/公告号JPS63166242A

    专利类型

  • 公开/公告日1988-07-09

    原文格式PDF

  • 申请/专利权人 MITSUBISHI ELECTRIC CORP;

    申请/专利号JP19860314106

  • 发明设计人 SUDA ATSUKO;

    申请日1986-12-27

  • 分类号H01L21/66;G01R31/26;

  • 国家 JP

  • 入库时间 2022-08-22 07:04:42

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