首页> 外国专利> THIN FILM RESISTOR EXCELLENT IN TRANSMISSION OF LIGHT AND CORROSION RESISTANCE AND SPUTTERING METHOD FOR OBTAINING THIS THIN FILM RESISTOR

THIN FILM RESISTOR EXCELLENT IN TRANSMISSION OF LIGHT AND CORROSION RESISTANCE AND SPUTTERING METHOD FOR OBTAINING THIS THIN FILM RESISTOR

机译:透光性和耐腐蚀性优异的薄膜电阻器以及采用该薄膜电阻器的溅射方法

摘要

PURPOSE:To enhance light transmission and corrosion resistance, by constituting a thin film resistor of an amorphous film having the specified composition consisting of Cr, Si and Fe of specified thickness. CONSTITUTION:A thin film resistor consists of an amorphous film having composition of by weight 0.07-0.10% Cr, 66.5-72.2% Si and the balance Fe and the film thickness of this amorphous film is regulated to 200-2,000nm. In the above-mentioned composition, when Cr is less than 0.07%, corrosion resistance is reduced and when it is more than 0.10%, the transmission of visible rays of light is reduced. When Si is less than 66.5%, the adhesion of the film is reduced and when it is more than 72.2%, the transmission of visible rays of light is reduced. Further the thin film resistor is made to the amorphous film in order to enhance corrosion resistance and when the film thickness is less than 20nm, corrosion resistance is reduced and electric resistance value is made excessively large and when it is more than 2,000nm, the transmission of visible rays of light is reduced. Further the above-mentioned thin film resistor can be obtained by such a sputtering method generating discharge between a target consisting of 20-30% Cr, 10-20% Si and the balance Fe and material to be treated under reduced pressure.
机译:目的:通过构成非晶膜的薄膜电阻器来增强透光性和耐腐蚀性,该非晶膜具有由特定厚度的Cr,Si和Fe组成的特定成分。组成:薄膜电阻器由非晶膜组成,该非晶膜的成分为0.07-0.10%Cr,66.5-72.2%Si和余量的Fe,并且该非晶膜的膜厚调节为200-2,000nm。在上述组成中,当Cr小于0.07%时,耐腐蚀性降低,而当其大于0.10%时,可见光的透射率降低。当Si小于66.5%时,膜的粘合性降低,而当其大于72.2%时,可见光的透射率降低。另外,为了提高耐蚀性而在非晶质膜上形成薄膜电阻,当膜厚小于20nm时,耐蚀性降低,电阻值过大,大于2000nm时,透射率降低。可见光的减少。此外,上述薄膜电阻器可以通过这样的溅射方法获得,该溅射方法在由20〜30%的Cr,10〜20%的Si和其余的Fe构成的靶与减压下的处理材料之间产生放电。

著录项

  • 公开/公告号JPS63216960A

    专利类型

  • 公开/公告日1988-09-09

    原文格式PDF

  • 申请/专利权人 MEIDENSHA ELECTRIC MFG CO LTD;

    申请/专利号JP19870050283

  • 发明设计人 OYAMADA KENSHIROU;YANAGIDA TAKESHI;

    申请日1987-03-06

  • 分类号C23C14/14;C23C14/34;

  • 国家 JP

  • 入库时间 2022-08-22 07:03:42

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