MINUTE STRUCTURE OF POLYCRYSTALLINE WSI2 FILM

摘要

PURPOSE:To obtain a WSi2 film having low resistance, by orienting crystal grains. CONSTITUTION:After ordinary washing is performing with acid, the surface of a P-type (511) Si substrate 2 is cleaned with dilluted fluoric acid treatment. The substrate 2 is heated in an evaporating apparatus to evaporate W. Thus, a WSi2 film which has the directivity that crystal grains are oriented to the same direction can be formed. In the case of a half-metallic material such as WSi2, scattering of a grain boundary can be made weak by orienting the crystal grains. Therefore, the resistance can be reduced by orienting the crystal grains.