首页> 外国专利> Process and apparatus for continuously controlling the undercooling of the solidification front of a single crystal during its development, and use in its growth control

Process and apparatus for continuously controlling the undercooling of the solidification front of a single crystal during its development, and use in its growth control

机译:在单晶发展过程中连续控制单晶凝固前沿过冷的方法和设备,及其在生长控制中的应用

摘要

the present invention is directed to a process and a device for controlling supercooling of a single crystal during the development.;the continuous potential difference between a point (74) of the crystal (66) during training and a point (72) of a solid part (38) of the material separated from the liquid (36) via an interface (40) for different reference of the solidification front (64).this potential difference is used to determine the change of temperature due to supercooling at the solidification front (64) and the dopant concentration in the crystal forming.;application to the control of the composition of a single crystal during the development.
机译:本发明涉及在显影过程中控制单晶过冷的方法和装置。训练过程中晶体(66)的点(74)和固体点(72)之间的连续电势差通过界面(40)与液体(36)分离的部分物料(38)用于凝固前沿(64)的不同参考。该电势差用于确定由于凝固前沿(过冷)引起的温度变化( 64)和晶体形成中的掺杂剂浓度;用于控制显影过程中单晶的组成。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号