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Process and apparatus for continuously controlling the undercooling of the solidification front of a single crystal during its development, and use in its growth control
Process and apparatus for continuously controlling the undercooling of the solidification front of a single crystal during its development, and use in its growth control
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机译:在单晶发展过程中连续控制单晶凝固前沿过冷的方法和设备,及其在生长控制中的应用
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摘要
the present invention is directed to a process and a device for controlling supercooling of a single crystal during the development.;the continuous potential difference between a point (74) of the crystal (66) during training and a point (72) of a solid part (38) of the material separated from the liquid (36) via an interface (40) for different reference of the solidification front (64).this potential difference is used to determine the change of temperature due to supercooling at the solidification front (64) and the dopant concentration in the crystal forming.;application to the control of the composition of a single crystal during the development.
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