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Electron-beam-pumped semiconductor laser and array

机译:电子束泵浦半导体激光器和阵列

摘要

An eiectron-beam-pumped semiconductor laser generates a substantially transverse laser amplification (105) in response to a longitudinal electron beam input (104). As a result of a grooved active region configuration, the transverse laser amplification (105) results in a longitudinal laser output (106) in the same direction as that of the original electron beam input (104). This composite transverse- longitudinal configuration results in reduced threshold power density, thus enhancing laser lifetime, while at the same time provides a configuration which is particularly advantageous for use in large-area laser array display screens.
机译:电子束泵浦半导体激光器响应于纵向电子束输入(104)而产生基本上横向的激光放大(105)。由于具有沟槽的有源区域构造,横向激光放大(105)导致沿与原始电子束输入(104)相同的方向的纵向激光输出(106)。这种复合的横向-纵向构造导致降低的阈值功率密度,从而延长了激光器寿命,同时提供了一种特别适用于大面积激光器阵列显示屏的构造。

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