Semiconductors - scanning circuit, is suitable for a temporary storage circuit in a semiconductor - memory chip

摘要

A sense circuit for use in a semiconductor memory senses an input signal by comparing the input signal with a reference voltage. The sense circuit comprises a sense amplifier having first and second nodes, and first and second transfer gates. The first transfer gate couples the input signal to the first node of the sense amplifier. The second transfer gate couples the reference voltage to the second node of the sense amplifier. A level-shift circuit is provided between the second node of the sense amplifier and the second transfer gate. In response to the voltage level of the input signal latched in the first node, the level-shift circuit shifts the level of the reference voltage latched in the second node of the sense amplifier to a lower level when the input signal is high in voltage level, and shifts it to a higher level when the input signal is low in voltage level.