ELECTRON TRANSFER DIODE WITH PERIODIC BALLISTIC REGIONS

摘要

The invention relates to a new electron transfer transfer electrode structure. IT HAS A SUBSTRATE 1 A METAL LAYER FORMING THE CONTACT OF CATHODE K, A DOPED N, 12 ENTRY SEMICONDUCTOR LAYER, AND A PERIODIC STRUCTURE COMPRISING ELEMENTARY CELLS 10, 20, 30; EACH CELL HAS A SHORT DASHED BALLISTIC REGION 11 DELIMITED ON EITHER BY A VERY THIN LAYER, RESPECTIVELY P 12 AND N 13, AND FOLLOWED BY A TRANSIT REGION 14 OF HOMOGENEOUS MATERIAL DOPED N. IN SHORT BALISTIC REGIONS, THE ELECTRONS ACQUIRE THE ENERGY NECESSARY TO TRANSFER THE BAND TO THE L-BAND IN A TIME BELOW THE COLLISION TIME, THEN THE TRANSIT REGIONS ALLOW TO THERMALIZE THE ELECTRONS THAT TAKE THE FOLLOWING BALLISTIC REGION WITH AVERAGE ENERGY ALWAYS EQUAL. A METAL CONTACT OF ANODE A IS EXPECTED ON THE LAST TRANSIT REGION. / P P APPLICATION TO HIGH-PERFORMANCE CHARGE TRANSFER DIODES WORKING IN THE MILLIMETRIC STRIP. / P