Transferred electron device with periodic ballistic regions

摘要

The invention provides a new transferred electron device, including a substrate, a metal layer forming the cathode contact, an N doped semiconductor input layer and a periodic structure formed of elementary cells; each cell includes a short ballistic doped region defined on each side by a very thin layer, respectively P+ and N+, and followed by a transit region of an homogeneous N doped material. In the short ballistic regions, the electrons acquire the energy necessary for the transfer from the band &Ggr; to the band L in a time less than the collision time, then the transit regions allow the thermalization of the electrons which arrive at the following ballistic region with a mean energy still equal. A metal contact anode is provided on this last transit region.