The memorisation of an information bit in a static ram memory cell integrated of the mos type transistor for the implementation of the technical specification in the resultant

摘要

The memorisation of an information bit in a static ram memory cell integrated of the mos type transistor for the implementation of the technical specification in the resultant. / p & & & a p channel mos transistor is weakly dope present a hysteresis phenomenon in diet in the conduction threshold. / p & & p & this transistor is advantageously used as element of the memory cell in a static ram memory integrated.