PROCESS FOR PRODUCING A SINGLE CRYSTAL OF A GROUP III-V SEMICONDUCTOR COMPOUND BY THE LIQUID ENCAPSULATION CZOCHRALSKI DRAWING METHOD

摘要

PROCESS FOR PRODUCING A MONOCRYSTAL OF A GROUP III-V SEMICONDUCTOR COMPOUND BY THE CZOCHRALSKI DRAWING METHOD BY LIQUID ENCAPSULATION COMPRISING A FIRST MEANS FOR OBTAINING THE REDUCTION OF THE RATE OF DISLOCATIONS IN THE BODY OF LINGOT, CONSISTING OF OF A SHRINKAGE OF THE DIAMETER OF THE LINGOT AT THE BEGINNING OF DRAWING OR THROAT, CHARACTERIZED IN THAT IT ALSO INCLUDES A SECOND MEANS CONSISTING OF FORMATION AT THE SOLID-LIQUID INTERFACE OF THE DRAWING OF A FLAT SIDE ACCORDING TO A PERPENDICULAR CRYSTALLOGRAPHIC FACET AT THE DRAWING AXIS, THE LAST BEING CHOOSED PRIOR TO ALLOWING THE EXISTENCE OF SUCH A FACET, AND THIS INTERFACE PLANE OF A DIAMETER SLIGHTLY LOWER THAN THE DIAMETER OF THE LINGOT, AND A THIRD MEANS CONSISTING OF THE INTRODUCTION IN THE BATH FOR DRAWING DOPING ELEMENTS SELECTED AMONG ELEMENTS INDUCING FOR THE INGOT A CONDUCTIVITY OF TYPE N, P OR SEMI-INSULATION, AND OF DIAMETER AND IN QUANTITY AS THEY PRODUCE A VARIATION OF THE DIMENSION OF THE CRYSTALLINE MESH OF THE SAME ORDER OF SIZE AS THE VARIATION CAUSED BY THERMAL GRADIENT BETWEEN THE ZONE OF THE FLAT SIDE AND THE OUTER EDGE OF THE LINGOT. /P P APPLICATION: PRODUCTION OF INDIUM PHOSPHIDE MONOCRYSTALS OF DIFFERENT TYPES OF CONDUCTIVITY AND LARGE DIAMETER WITHOUT DISLOCATIONS.