METHOD FOR DEPOSITING COMPOUND III-V OR II-VI SEMICONDUCTOR THIN FILMS TO A THERMALLY DECOMPOSED SUBSTRATE

摘要

The invention relates to a process for the preparation of composite semiconductor thin films or to the introduction of an organometallic composition containing a Group III or II component and to a hydride containing a Group V or VI element on a heated substrate. , TO SUBMIT THERMAL DECOMPOSITION THEREFORE TO FORM, ON THE SUBSTRATE, A SEMICONDUCTOR COMPOUND III-V OR II-VI. / P P ACCORDING TO THE INVENTION, WHILE NORMALLY MAKING A FIRST CARRIER GAS AND A HYDRIDE DILUTED AT A FIRST CONCENTRATION WHICH IS NOT CHEMICALLY REACTED WITH THE ORGANOMETALLIC COMPOUND TO PRODUCE A III-V OR II-VI COMPOUND AND CONTAINS AN ELEMENT OF GROUP V OR VI, A CYCLE COMPRISING ONE METHOD OF INTRODUCTION, ON THE SUBSTRATE, HYDRIDE DILUTED BY A SECOND CARRIER GAS AND AT A CONCENTRATION SUPERIOR TO THE FIRST, A STEP OF INTERRUPTION OF THE INTRODUCTION OF THE HYDRIDE TO THE SECOND CONCENTRATION, A STEP OF INTRODUCTION TO THE SUBSTRATE OF AN ORGANOMETAL COMPOUND LIQUE DILATES WITH A THIRD CARRIER GAS AND CONTAINS A GROUP III OR II ELEMENT, A STEP FOR INTERRUPTING THE INTRODUCTION OF THE ORGANOMETALLIC COMPOUND AND A STEP IN INTRODUCING A GASEOUS HALIDE THAT IS DILUTED WITH A FOURTH CARRIER GAS. The invention applies in particular to semi-conductors.