Cadmium mercury telluride photodiode

摘要

A CMT photodiode is formed by bonding to a silicon chip (2) an epitaxially grown CMT pn-junction (1). A hole (8) is formed through the junction layers (9, 10) by ion-etching, which converts the p-type region of the inner surface of the hole to n-type, and exposes a metal contact pad (6) on the silicon substrate. A homojunction is thus formed in parallel with the heterojunction. The invention enables the use of high quality grown junctions in CMT photodetectors. IMAGE