METHOD FOR CONTROLLING SUPERSATURATED IMPLANTATION AND CONCENTRATION OF DIFFERENT ATOMS TO DEEP PART OF SOLID BY HIGH ENERGY ELECTRON RAY

摘要

PURPOSE:To make possible the supersatd. implantation of different phase metallic atoms at the prescribed profile of concn. into the prescribed position in the deep part in the base phase metal by embedding the different phase metal into the base phase metal and irradiating high energy electron rays thereto. CONSTITUTION:A material embedded with the different phase 1 consisting of different atoms such as Ge and Si in the in Al as the base material 2 is manufactured. The electron rays 3 of the high energy enough to induce displacement in the Al base atoms and the different phase atoms of Ge, Si, etc. are irradiated thereto. The respective different atoms, when irradiated with such rays, collide against electrons (e) and jump randomly. As a result the different atoms of Ge, Si, etc. incorporated preliminarily into the base diffuse with the Al atoms of the base phase with each other and the respective different phase regions connect to the Al atoms of the base phase at the gentle concn. profile of the different atoms by which the different atoms are supersaturatedly implanted into the base phase.