Magnetron plasma reactor for plasma etching and depositing IC - is filled with ionisable gas subjected to RF and magnetic fields

摘要

The magnetron plasma reactor for high-intensity plasma treatment of a surface and contains a plasma chamber bordered by an inner wall surrounded by an outer wall. The inner wall has surfaces for laying objects to be worked on e.g. I.C. wafers and the chamber is filled with gas to be ionised. A radial electric r.f. field (E) between the walls and a magnetic d.c. field (B) parallel to the surfaces are established. This allows the object to be subjected to ExB type plasma discharge. The outer wall has a multi-pole permanent magnetic system with alternating north and south poles around its perimeter. This generates a repeating spot-like magnetic confining field in the chamber increasing the life of the plasma components and improving the plasma homogenity.