首页>
外国专利>
METHOD FOR PRODUCING AN INSULATION ISOLATING THE ACTIVE AREAS OF A HIGHLY INTEGRATED CMOS CIRCUIT.
METHOD FOR PRODUCING AN INSULATION ISOLATING THE ACTIVE AREAS OF A HIGHLY INTEGRATED CMOS CIRCUIT.
展开▼
机译:一种用于隔离绝缘,高度集成的CMOS电路有源区域的方法。
展开▼
页面导航
摘要
著录项
相似文献
摘要
The invention relates to a method for the manufacture of insulating portions separating the active regions of a VLSI CMOS circuit wherein an oxide coated silicon substrate is etched in those regions in which minimal insulation is to be required by etching trenches in the oxide insulating layers overlying the minimal insulation regions and generating field oxide regions in the remaining portions separating the active regions. The etching is preferably carried out by a combination of dry and wet etching steps. The field oxide regions may be produced by the well known local oxidation of silicon (LOCOS).
展开▼