Method of manufacturing VLSI logic circuits in polysilicium gate NMOS fashion with an integrated EEPROM memory for tunnel current programming

摘要

The invention relates to a method of manufacturing VLSI logic circuits in polysilicon-gate NMOS technology together with integrated EEPROM memories for tunnel current programming, the required field implantation being divided into two substeps and, after a nitride/oxide sandwich insulation (7, 8) has been produced, an oxidation being carried out in moist atmosphere at 850 DEG C to oxidise spacers (10) at the edges of the nitride layer. IMAGE