Heterostructure transistor having a germanium layer on gallium arsenide and a method for manufacturing the same using molecular beam expitaxial growth

摘要

A heterostructure bipolar transistor is formed by a process of steps of holding an N-type gallium arsenide body (3) used as an emitter region in a high vacuum of 10⁻⁹ torr to 10⁻¹³ torr at a first temperature of 400°C to 1,000°C where arsenic on a surface of the gallium arsenide body drift away, lowering the first temperature to a second temperature of 300°C to 400°C to start a molecular beam exitaxial growth of a germainum, and forming an N-type germanium layer (4) used as a collector region.