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METHOD OF DETERMINING THE CAPACITANCE OF MATERIAL WITH WIDE INHIBITION ZONE IN HETEROJUNCTIONS AND MIS-STRUCTURES
METHOD OF DETERMINING THE CAPACITANCE OF MATERIAL WITH WIDE INHIBITION ZONE IN HETEROJUNCTIONS AND MIS-STRUCTURES
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机译:测定异质结和MIS结构中宽阻区材料的电容的方法
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摘要
the invention относитс to semiconductor technology and can be used дл контрол parameters of semiconductor structures and their manufacture, as well as in p. роцессе изготовлени нолупроводниковых d
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