Power laser useful for pumping YAG laser - is based on indium-contg. III=V Semiconductor materials

摘要

In a power laser comprising an active layer (3) sandwiched between two confinement layers (2,4) formed on a substrate (1), the novelty is that the layers are formed of indium-contg. III-V semiconductor material. Pref. the confinement layers are of GaInP and the active layer is of GaInAsP. USE/ADVANTAGE - The laser is a 0.808 microns wavelength power laser used esp. for pumping a YAG laser. The laser is much more reliable than those based on GaAlAs/GaAs due to the absence of Al and dislocation propagation is blocked by the large size of the indium atoms.