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Dislocation-free epitaxial layer on a lattice-mismatched porous or otherwise submicron patterned single crystal substrate
Dislocation-free epitaxial layer on a lattice-mismatched porous or otherwise submicron patterned single crystal substrate
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机译:晶格不匹配的多孔或亚微米图案的单晶衬底上的无位错外延层
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摘要
Dislocation-free epitaxial layers on the surfaces of lattice mismatched single crystal substrates, such as germanium or gallium arsenide on silicon, can be grown provided the surfaces are suitably patterned, such as castellated or porous.
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