Tailorable infrared sensing device with strain layer superlattice structure
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机译:具有应变层超晶格结构的可定制红外传感装置
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摘要
An infrared photodetector is formed of a heavily doped p-type Ge.sub.x Si.sub.1-x /Si superlattice in which x is pre-established during manufacture in the range 0 to 100 percent. A custom tailored photodetector that can differentiate among close wavelengths in the range of 2.7 to 50 microns is fabricated by appropriate selection of the alloy constituency value, x, to establish a specific wavelength at which photodetection cut-off will occur.
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机译:红外光电探测器由重掺杂的p型Gex x 1-x / Si超晶格形成,其中x在制造过程中预先建立在0%到100%的范围内。可在2.7至50微米的范围内接近波长中区分甲量身定制光检测器是由合金选区值,x的适当选择制造,以建立在该光检测截止将发生的特定波长。
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