首页> 外国专利> Method for simulating an open fault in a logic circuit comprising field effect transistors and simulation models for implementing the method

Method for simulating an open fault in a logic circuit comprising field effect transistors and simulation models for implementing the method

机译:在包括场效应晶体管的逻辑电路中模拟开路故障的方法和用于实现该方法的仿真模型

摘要

A method for simulating an open fault in a logic circuit comprising field effect transistors utilizes a simulation model which is employed and which takes the fault condition signal storage into consideration by way of an output stage. Given the appearance of a fault- influence signal at the output of a simulation stage, this maintains the through- connection of the signal which appeared immediately before the influenced signal to the simulation model output. In order to take reloading events in the real logic circuit into consideration, this through-connection is canceled after a prescribable time interval.
机译:一种用于在包括场效应晶体管的逻辑电路中模拟断路故障的方法,其利用了仿真模型,该仿真模型通过输出级将故障条件信号存储考虑在内。给定故障影响信号出现在仿真阶段的输出端,这将保持信号的直通连接,该信号在受影响的信号之前立即出现在仿真模型输出中。为了考虑实际逻辑​​电路中的重载事件,在规定的时间间隔后取消此直通连接。

著录项

  • 公开/公告号US4868825A

    专利类型

  • 公开/公告日1989-09-19

    原文格式PDF

  • 申请/专利权人 SIEMENS AKTIENGESELLSCHAFT;

    申请/专利号US19870056894

  • 发明设计人 SIEGMAR KOEPPE;

    申请日1987-06-03

  • 分类号G06F15/20;

  • 国家 US

  • 入库时间 2022-08-22 06:27:25

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