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Method for growing a single crystal of cubic boron nitride semiconductor and method for forming a p-n junction thereof, and light emitting element
Method for growing a single crystal of cubic boron nitride semiconductor and method for forming a p-n junction thereof, and light emitting element
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机译:生长立方氮化硼半导体的单晶的方法及其p-n结的形成方法和发光元件
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摘要
A method for growing a single crystal of cubic boron nitride semiconductor in a growing container sealed under high pressure and high temperature conditions, which comprises dissolving in a dopant-containing boron nitride solvent a boron nitride starting material placed at a high temperature zone in the growing container, and providing a temperature gradient to the solvent so that the temperature dependence of the solubility is utilized to let the single crystal form and grow at a low temperature zone in the growing container.
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