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GATE DRIVING CIRCUIT FOR DOUBLE GATE IGBT

机译:双栅极IGBT的栅极驱动电路

摘要

PURPOSE:To shorten the delay of a turning OFF time by applying a signal having a small operation delay to the second gate of a IGBT, and simultaneously utilizing the delaying operation of an element to apply an OFF signal to a first gate. CONSTITUTION:If 7 pulses of narrow width of several musec are applied by a one shot circuit 19 to a second gate of IGBT as a signal having a small operation delay when a double gate IGBT 18 is turned OFF, and an OFF signal is applied to a first gate by utilizing the delay operation of an element itself having the operation delays of a photocoupler 6, transistors 8, 12, 13. That is, the narrow OFF pulses are applied in a pulse transformer type having substantially no operation delay to the second gate of the double gates, and a gate driving circuit of a simple and economic double gate IGBT having a short turning OFF time can be obtained at the first gate by utilizing the delay of an element itself of a photocoupler, an amplifying transistor at the time of OFF.
机译:目的:通过向IGBT的第二栅极施加操作延迟较小的信号,并同时利用元件的延迟操作向第一栅极施加OFF信号,来缩短关闭时间的延迟。组成:如果在双栅极IGBT 18截止时,一个发射电路19向IGBT的第二栅极施加了7微秒宽度的窄脉冲,作为具有较小操作延迟的信号,则将OFF信号施加至通过利用具有光耦合器6,晶体管8、12、13的操作延迟的元件本身的延迟操作来形成第一栅极。即,将窄的OFF脉冲以基本上没有操作延迟的脉冲变压器类型施加到第二栅极。通过利用光耦合器(此时的放大晶体管)的元件本身的延迟,可以在第一栅极获得双栅极的栅极,以及具有短截止时间的简单且经济的双栅极IGBT的栅极驱动电路。关。

著录项

  • 公开/公告号JPH02155456A

    专利类型

  • 公开/公告日1990-06-14

    原文格式PDF

  • 申请/专利权人 TOSHIBA CORP;

    申请/专利号JP19880306895

  • 发明设计人 OKATSUCHI CHIHIRO;

    申请日1988-12-06

  • 分类号H02M1/08;H01L21/336;H01L29/78;H03K17/04;

  • 国家 JP

  • 入库时间 2022-08-22 06:26:42

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