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GATE DRIVING CIRCUIT FOR DOUBLE GATE IGBT
GATE DRIVING CIRCUIT FOR DOUBLE GATE IGBT
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机译:双栅极IGBT的栅极驱动电路
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摘要
PURPOSE:To shorten the delay of a turning OFF time by applying a signal having a small operation delay to the second gate of a IGBT, and simultaneously utilizing the delaying operation of an element to apply an OFF signal to a first gate. CONSTITUTION:If 7 pulses of narrow width of several musec are applied by a one shot circuit 19 to a second gate of IGBT as a signal having a small operation delay when a double gate IGBT 18 is turned OFF, and an OFF signal is applied to a first gate by utilizing the delay operation of an element itself having the operation delays of a photocoupler 6, transistors 8, 12, 13. That is, the narrow OFF pulses are applied in a pulse transformer type having substantially no operation delay to the second gate of the double gates, and a gate driving circuit of a simple and economic double gate IGBT having a short turning OFF time can be obtained at the first gate by utilizing the delay of an element itself of a photocoupler, an amplifying transistor at the time of OFF.
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