PURPOSE:To obtain a metal-film resistor whose accuracy is high and in which a deterioration in a characteristic is small by a method wherein a resistance film layer is sandwiched between alumina layers which have been formed by a vapor-deposition operation, a sputtering operation or the like. CONSTITUTION:This resistor is composed of the following: an alumina base 1; an alumina lower-layer protective film 2 which has been formed by a high-frequency sputtering system; an N-Cr resistor 3 which has been formed by a sputtering system; an alumina upper-layer protective film 4 which has been formed by the sputtering system; an insulating protective film 5 by a paint; a metal electrode 6. When the metal film resistor 3 is sandwiched between the alumina protective film layers 2, 4 in this manner, it is possible to obtain a metal film resistor in which a deterioration in a characteristic of the resistor 3 is small and whose accuracy and reliability are high.
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