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WET CHEMICAL SURFA CE TREATMENT OF SEMICONDUCTOR WAFER

机译:半导体晶片的湿法化学表面处理

摘要

PURPOSE: To easily, quickly and effective execute a treating step by introducing a chemically active gaseous substance and atomized particle-like water in a system involving semiconductor wafers and by forming a phase acting on the surface contained in the system itself. CONSTITUTION: A chemically active gaseous substance and atomized particle-like water are fed in a system involving semiconductor wafers. The active substance is one which interacts with the atomized water to form a phase acting on the wafer surface and such a preferable gas example is ammonia, hydrogen chloride, hydrogen fluoride, ozone or ozonized oxygen. These gas and liq. phases interact to form a phase acting on the surface contained in the system itself. This wet chemically treats the polished surface of the semiconductor wafer, removes remaining dirty particles to accomplish a special surface nature by a simple and scientifically accurate method.
机译:目的:为了通过在涉及半导体晶片的系统中引入化学活性气态物质和雾化的颗粒状水,并形成作用在系统本身所包含的表面上的相,来轻松,快速且有效地执行处理步骤。组成:将化学活性气态物质和雾化的颗粒状水送入包含半导体晶片的系统中。活性物质是一种与雾化水相互作用形成作用在晶片表面上的相的物质,这种优选的气体例子是氨,氯化氢,氟化氢,臭氧或臭氧化的氧气。这些气体和液体。相相互作用形成作用在系统本身包含的表面上的相。该湿法化学处理半导体晶片的抛光表面,通过简单且科学准确的方法去除残留的脏颗粒,以实现特殊的表面性质。

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