PURPOSE:To make a film EL element to emit light with high efficiency and high luminance by providing ZnS1-delta (0delta1) between a luminous layer and an insulating layer on one side of the luminous layer. CONSTITUTION:A luminous layer 4 consist of ZnS as a base material and a result film of Mn as a luminescence center impurity, and puts ZnS1-delta (0delta1) film respectively between the luminous layer and Si3N4 layers 3, 5 of both sides. With this constitution, when the strong electric field is applied to electrodes 6a and 6b, the luminous layer 4 emits light and light is cought through a transparent substrate 1. At this step, a leak current is restrained because Si3N4 layers 3, 5 have high resistance and low dielectric constant, and migration electric charge in the luminous layer ZnS4 is performed effectively because a part of the base material layer 4 is made of ZnS1-delta. Consequently, the film EL element emits light with high efficiency and high luminance.
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