METHOD FOR DEPOSITION OF GALLIUM ARSENIDE FROM VAPOR PHASE GALLIUM-ARSENIC COMPLEXES

摘要

process for depositing films on a substrate of gaas, resulting in the vapor phase photochemical decomposition of selected complexes of gallium arsenide to form intended to be deposited on the gaas substrate. the complex of gallium arsenide x3gaasr3 have the formula where x is methyl or trifluoromethyl, and r is hydrogen, methyl or trifluoromethyl.the complex of gallium arsenide vapor is irradiated with ultraviolet light at a wavelength and an intensity sufficient to convert internal steam is to be deposited.