Generator of molecular beams by thermal decomposition for the production of semiconductors by epitaxial deposition

摘要

the cracking of arsine and phosphine are used to train an arsenic or phosphorus molecular jet is carried out on the inner surfaces of a duct (11) made of quartz, cracking, or boron nitride and heated from outside by radiation of a filament.advances of internal walls (6a, 6b, 6c and 6d) increases the surface cracking and prevent a molecule through the pipe line.