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Improved BICMOS logic circuit with full swing operation

机译:具有全摆幅操作的改进型BICMOS逻辑电路

摘要

According to the present invention, a CMOS interface circuit (C2) similar to a latch made by two CMOS cross coupled inverters (INV1, INV2) is placed directly on the output node (14) of conventional BICMOS logic circuit (11) operating alone in a partial swing mode. This latch is made of four FETs P5, P6, N8, N9 cross-coupled in a con­ventional way with the feedback loop connected to said output node (14) The partial voltage swing (VBE to VH-VBE) naturally given by the output bipolar transistors (T1, T2) mounted in an push pull configuration is rein­forced to full swing (GND to VH) by the latch at the end of each transition The state of the output node is forced by the latch because of the high driving capability due to the presence of said output bipolar transistors (T1, T2). As a result, the improved BICMOS logic circuit (D2) has an output signal (S) that ranges within the desired full swing voltage at the output terminal (15). It is a charac­teristic of this embodiment that the structure of CMOS interface circuit (C2) is always independent of the logic function implemented in the conventional BICMOS logic circuit (11). More generally, the CMOS interface circuit may have various physical implementations, however, it is always comprised of CMOS FETs and it becomes active at least in one of the GND to VBE or (VH - BE) to VH range.
机译:根据本发明,类似于由两个CMOS交叉耦合的反相器(INV1,INV2)制成的锁存器的CMOS接口电路(C2)直接放置在单独操作的常规BICMOS逻辑电路(11)的输出节点(14)上。部分摇摆模式。该锁存器由四个以常规方式交叉耦合的FET P5,P6,N8,N9组成,反馈回路连接到所述输出节点(14)。输出双极性自然给出的部分电压摆幅(VBE至VH-VBE)在每次转换结束时,通过锁存器将以推挽式结构安装的晶体管(T1,T2)增强至全摆幅(GND至VH)。由于高驱动能力,输出锁存器强制输出节点的状态所述输出双极晶体管(T1,T2)的存在。结果,改进的BICMOS逻辑电路(D2)具有在输出端子(15)的期望的全摆幅电压范围内的输出信号(S)。该实施例的特征在于,CMOS接口电路(C2)的结构总是独立于常规BICMOS逻辑电路(11)中实现的逻辑功能。更一般而言,CMOS接口电路可以具有各种物理实现方式,但是,它始终由CMOS FET组成,并且至少在GND至VBE或(VH-BE)至VH范围之一中变为有效。

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