Semiconductor component with electrode(s) on substrate surface - has four-layer electrode assembly with top and bottom electrodes sandwiching amorphous silicon and silicon insulating film

摘要

The semiconductor substrate (101) carries two electrodes (102, 106) to which voltage is applied and forms a transition from a high resistance to a low one between both electrodes. The electrode assembly contains a region of amorphous silicon (105). The electrode assembly is a four-layer lamination with a top electrode (106), the amorphous silicon region, a silicon insulating film (107), and a lower electrode. The lower electrode pref. consists of a dopant diffusion zone on the semiconductor substrate surface. Alternately, it is formed by a polycrystalline silicon. The amorphous silicon typically contains a dopant of the group III. USE/ADVANTAGE - For data memories, with resistance value equaling that of insulating material.