Selective CVD on silicon surface - esp. for forming titanium silicide layer

摘要

A selective CVD process involves (a) positioning a substrate with a silicon surface and an insulating surface in a reaction chamber; (b) feeding a silicon hydride gas into the chamber to reduce and remove any native oxide film from the silicon surface; and (c) feeding process gas into the chamber for selective layer formation only on the silicon surface. - Appts., for selective CVD of a layer on a wafer positioned in a reaction chamber, includes (i) a wafer holder with a wafer contact section made of quartz glass, which contacts only the peripheral part of the wafer and which divides the reaction chamber into two regions; (ii) a supply system for feeding cleaning or flushing gas into the first chamber region at the wafer heating side; (iii) a process gas supply and evacuation system connected to the second chamber region at the opposite side of the wafer; and (iv) a heating system for heating the wafer from the first region side.