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Charge transfer device having a buried transfer channel with higher and lower concentrations
Charge transfer device having a buried transfer channel with higher and lower concentrations
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机译:具有浓度较高和较低的掩埋传输通道的电荷传输设备
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摘要
A charge transfer device comprising a semiconductor body including a first conductivity type region and a second conductivity region which defines a charge transfer channel below a major surface of the semiconductor body. An insulative layer is provided on the major surface. A plurality of electrodes is attached to the insulative layer to produce potential wells in response to application of different potentials thereto with respect to a common electrode attached to the opposite surface of the semiconductor body. The n-type conductivity charge transfer channel includes a center section of lower impurity concentration and a peripheral section of higher impurity concentration which substantially eliminates the undesirable lateral field effect which would otherwise occur in an area adjacent to the boundary with the first conductivity region.
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