Degradation of the charge transfer efficiency of a buried channel charge coupled device due to radiation damage by a beta source

摘要

The charge transfer efficiency of an EEV UT101 buried channel charge coupled device has been measured after irradiation by a /sup 90/Sr beta source. The dependence on signal density and clock timing has been established. By the calculation of the energy level and capture cross section of the main electron trapping centre, and some annealing studies, the main radiation induced trapping complex has been found to be the Si-E centre. Some suggestions for the improvement of the degradation are made.