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III-V on Si heterostructure using a thermal strain layer
III-V on Si heterostructure using a thermal strain layer
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机译:使用热应变层的Si异质结构上的III-V
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摘要
A method for producing wafers having deposited layers of III-V materials on Si or Ge/Si substrates is disclosed. The method involves the use of multiple in situ and ex situ annealing steps and the formation of a thermal strain layer to produce wafers having a decreased incidence of defects and a balanced thermal strain. The wafers produced thereby are also disclosed.
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