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Infrared detector circuit having a resistor series connected to the detector to limit the current across the pn junction of the FET

机译:红外检测器电路,其电阻器串联到检测器,以限制流经FET pn结的电流

摘要

A circuit for an infrared detector includes a field effect transistor and a gate resistor connected thereto. A current-limiting component, preferably an ohmic resistor, is connected in series with the detector element between the gate of the field effect transistor and ground, to limit the current across the pn junction of the field effect transistor.
机译:用于红外检测器的电路包括场效应晶体管和与其连接的栅极电阻器。限流部件,优选地为欧姆电阻,与检测器元件串联连接在场效应晶体管的栅极与地之间,以限制跨场效应晶体管的pn结的电流。

著录项

  • 公开/公告号US4906834A

    专利类型

  • 公开/公告日1990-03-06

    原文格式PDF

  • 申请/专利权人 HEIMANN GMBH;

    申请/专利号US19880256463

  • 发明设计人 REINER QUAD;UDO RINGELSTEIN;

    申请日1988-10-12

  • 分类号H01J40/14;

  • 国家 US

  • 入库时间 2022-08-22 06:07:48

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