Process for photo-assisted epitaxial growth using remote plasma with in- situ etching

摘要

A process for forming deposited film, which comprises:P P(a) the step of preparing a substrate having crystal nuclei or regions where crystal nuclei are selectively formed scatteringly on the surface for forming deposited film in a film forming space for formation of deposited film;PP(b) the step of forming deposited film on the above substrate by introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance for film formation (B) which is chemically mutually reactive on said activated species (A) separately from each other into said film-forming space to effect chemical reaction therebetween;PP(c) the step of introducing a gaseous substance (E) having etching action on the deposited film to be formed or a gaseous substance (E.sub.2) forming said gaseous substance (E) into said film-forming space during said film- forming step (b) and exposing the deposited film growth surface to said gaseous substance (E) to apply etching action thereon, thereby effecting preferentially crystal growth in a specific face direction;P P(d) irradiating said gaseous substance (E) with light energy during said step (c), andPP(e) the step of increasing etching activity of said gaseous substance (E) by irradiation of light energy.