Lateral insulated gate bipolar transistors with improved latch-up immunity
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机译:横向绝缘栅双极型晶体管,具有更高的闩锁抗扰性
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摘要
The present invention relates generally to insulated gate transistors and more particularly, to laterally implemented insulated gate transistors having improved current capacity and improved immunity to latch-up. Specifically, it has been found that a lateral insulated gate transistor fabricated on a heavily doped substrate such as a p+ substrate exhibits improved current density. Further, the inclusion of an additional heavily doped region such as a P+ region proximate the base region contributes to improved latch-up immunity within the device.
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