首页> 外国专利> MEASURING METHOD AND CONTROLLER FOR FLOW RATE OF GASEOUS HCL IN CVD DEVICE

MEASURING METHOD AND CONTROLLER FOR FLOW RATE OF GASEOUS HCL IN CVD DEVICE

机译:CVD装置中气相HCl的流量测量方法和控制器

摘要

PURPOSE:To always exactly measure and control the flow rate of gaseous HCl from a measured temp. by forming a calibration curve from the flow rate of the gaseous HCl and the temp. in a part of a reaction furnace. CONSTITUTION:The calibration curve of the temp.-flow rate of the gaseous HCl is formed by changing the flow rate of the gaseous HCl in a 0 to 50% range and measuring the temp. in the flange part 15 of the reaction furnace 2 by a temp. sensor 16 with the CVD device. The flow rate of the gaseous HCl is determined in real time from the calibration curve if the temp. of the flange part 15 is measured by the sensor 16 during reaction. The detected temp. T is converted to a digital value by an A/D converter 17 and is inputted to a controller 18. The controller 18 outputs the control signal corresponding to the difference between the detected temp. T and the set temp. to a mass flow controller 12 which regulates the flow rate of the gaseous HCl.
机译:目的:始终从测量的温度准确测量和控制气态HCl的流速。通过从气态HCl的流速和温度形成校准曲线。在反应炉的一部分中。组成:气态盐酸温度流量的校准曲线是通过在0至50%的范围内改变气态盐酸的流量并测量温度而形成的。在一定温度下在反应炉2的凸缘部分15中的温度。带有CVD装置的传感器16。如果温度为零,则根据校准曲线实时确定气态HCl的流速。在反应过程中,通过传感器16测量凸缘部分15的高度。检测到的温度T由A / D转换器17转换成数字值并输入到控制器18。控制器18输出与检测到的温度之间的差相对应的控制信号。 T和设定温度到达质量流量控制器12,该质量流量控制器12调节气态HCl的流速。

著录项

  • 公开/公告号JPH03146669A

    专利类型

  • 公开/公告日1991-06-21

    原文格式PDF

  • 申请/专利权人 SHIN ETSU HANDOTAI CO LTD;

    申请/专利号JP19890279843

  • 发明设计人 MIKI KATSUHIKO;TATE NAOTO;

    申请日1989-10-30

  • 分类号C23C16/44;C23C16/455;H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-22 06:05:45

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