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MANUFACTURE OF SUPERCONDUCTING ELEMENT, SUPERCONDUCTING TRANSISTOR, AND SUPERCONDUCTING THIN LINE

机译:超导元件,超导晶体管和超导细线的制造

摘要

PURPOSE:To enable a desired part to be changed into a superconductive phase by cladding a material thin film including a material to be changed into the superconductive phase at a desired part of a superconductive composition thin film in non-superconductive phase state on the surface of an insulating substrate and then by performing heat treatment. CONSTITUTION:A superconductive composition film with at least a superconductive phase, a semiconductor phase, and an insulation phase at the same composition system, namely a BiSrCaCu oxide thin film 2 in amorphous state, is formed from a sintered target on the surface of a substrate 1. The BiSrCaCu oxide thin film 2 shows a semiconductor state when Bi is in shortage. Bi2O3 3, 3 supplying Bi which is in shortage are clad to this thin film 2 with a fine gap. Then, the substrate 1 where the thin films 2 and 3 are formed is subjected to heat treatment within an electrical furnace, thus forming a superconductive thin film 4. In this case, Bi allows Bi of the thin film 3 to be introduced into the thin film 2 which is in shortage, thus enabling the thin film 2 to be superconductive, and then at the same time achieving crystallization of the thin film 2 from an amorphous stage.
机译:目的:通过将包含待转变成超导相材料的材料薄膜覆盖在非导电相态的超导组合物薄膜的所需部分上,从而使所需部分变为超导相。绝缘基板,然后进行热处理。组成:具有至少一个超导相,一个半导体相和一个绝缘相且在同一组成系统中的超导组成膜,即非晶态的BiSrCaCu氧化物薄膜2,是由烧结靶在基板表面上形成的Bi不足时,BiSrCaCu氧化物薄膜2成为半导体状态。将该Bi 2 O 3 3,3供给不足的Bi以微小的间隙包覆在该薄膜2上。然后,将形成有薄膜2和3的基板1在电炉内进行热处理,从而形成超导薄膜4。在这种情况下,Bi允许将薄膜3的Bi引入到薄膜中。薄膜2的短缺,从而使薄膜2超导,然后同时使薄膜2从非晶态结晶。

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