首页> 外国专利> ETCHING METHOD FOR POLYIMIDE RESIN FILM, WIRING STRUCTURE USING THE METHOD, AND PROCESSING METHOD FOR MATERIAL TO BE ETCHED

ETCHING METHOD FOR POLYIMIDE RESIN FILM, WIRING STRUCTURE USING THE METHOD, AND PROCESSING METHOD FOR MATERIAL TO BE ETCHED

机译:聚酰亚胺树脂膜的刻蚀方法,使用该方法的布线结构以及被刻蚀的材料的加工方法

摘要

PURPOSE:To prevent deterioration in capacity and insulation property by the corrosion, etc., of a wiring conductor, caused by a denatured layer, so as to improve the reliability of an element by removing, with an organic solvent, the denatured layer which is created at the surface of a polyimide resin film, reacting with etching during etching. CONSTITUTION:In the method of forming a resist film pattern 3 at a polyimide resin film 2 formed on a substrate 1, and selectively etching the polyimide resin film in etchant with the resist film pattern 3 as a mask, the denatured film arising on the polyimide resin film by etchant is removed by an organic solvent. It is to be desired that this organic solvent should be selected from aprotic polar solvent and/or polyamide. To remove the organic solvent used in the surface treatment of the polyimide resin film, cleaning and/or heating is done. Hereby, partial weakening of the polyimide resin film, which is caused by the staying organic solvent, can be prevented.
机译:目的:为了防止由于变性层引起的布线导体的腐蚀等导致容量和绝缘性能的降低,从而通过用有机溶剂去除已变性的层来提高元件的可靠性。在聚酰亚胺树脂膜的表面产生的杂质,在腐蚀过程中与腐蚀反应。组成:在形成于基板1上的聚酰亚胺树脂膜2上形成抗蚀剂膜图案3,并以抗蚀剂膜图案3为掩模在蚀刻剂中选择性蚀刻聚酰亚胺树脂膜的方法中,在聚酰亚胺上产生的变性膜通过蚀刻剂的树脂膜被有机溶剂去除。希望该有机溶剂应选自非质子极性溶剂和/或聚酰胺。为了除去在聚酰亚胺树脂膜的表面处理中使用的有机溶剂,进行清洁和/或加热。由此,可以防止由于残留有机溶剂而引起的聚酰亚胺树脂膜的部分弱化。

著录项

  • 公开/公告号JPH033239A

    专利类型

  • 公开/公告日1991-01-09

    原文格式PDF

  • 申请/专利权人 HITACHI LTD;

    申请/专利号JP19890136919

  • 申请日1989-05-30

  • 分类号H01L21/768;H01L21/306;H01L23/522;

  • 国家 JP

  • 入库时间 2022-08-22 05:59:58

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